| PART |
Description |
Maker |
| B72735D0050H062 |
CeraDiode SMD type, array, case size 1012 CeraDiode SMD型，数组，箱尺寸1012
|
EPCOS AG
|
| CAS16D14 |
Transponder RX antenna< SMD Type: CAS Series>
|
SUMIDA[Sumida Corporation]
|
| DBLS159G DBL151G DBL152G DBL153G DBL154G DBL155G D |
Bridge: Standard
LED ARRAY AMBER .56 X .56 SMD
LED ARRAY GREEN .56 X .56 SMD
LED ARRAY RD/GRN/BLU .56X.56 SMD 单相1.5安培。玻璃钝化整流桥
Single Phase 1.5 AMPS. Glass Passivated Bridge Rectifiers 单相1.5安培。玻璃钝化整流桥
LED ARRAY BLUE .56 X .56 SMD 单相1.5安培。玻璃钝化整流桥
|
TSC[Taiwan Semiconductor Company, Ltd]
Taiwan Semiconductor Co., Ltd.
|
| MZA3216Y241B MZA3216Y102B MZA3216D301C MZA3216R301 |
Chip Beads(SMD Array) For General Signal Line MZA Series MZA3216 Type
|
TDK Electronics
|
| V53C1664H |
High Performance Fast Page Mode Dual Cas CMOS Dynamic RAM
HIGH PERFORMANCE 64K X 16 BIT FAST PAGE MODE DUAL CAS CMOS DYNAMIC RAM
|
Mosel-Vitelic
MOSEL[Mosel Vitelic, Corp]
|
| KMM5361205C2WG KMM5361205C2W |
1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| KMM5364003CSW KMM5364003CSWG |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
Samsung semiconductor
|
| KMM5361205C2W |
1MBx36 DRAM Simm Using 1MBx16 And 4MB Quad Cas Edo
|
Samsung Semiconductor
|
| KMM5364005CKG KMM5364105CKG KMM5364105CK KMM536400 |
4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V 4米36的DRAM上海药物研究所利用4Mx46M四中科院K/2K，刷新，5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
SAMSUNG[Samsung semiconductor]
|
| CEE124NP-0R7MB CEE124NP-0R7MC CEE124 CEE124NP-1R3M |
POWER INDUCTORS <SMD Type: CEE Series> 1 ELEMENT, 0.75 uH, MANGANESE-ZINC-CORE, GENERAL PURPOSE INDUCTOR, SMD
POWER INDUCTORS Type: CEE Series
POWER INDUCTORS
POWER INDUCTORS <SMD Type: CEE Series
|
Sumida, Corp.
SUMIDA CORPORATION.
|
| KMM5364003BSW |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V 4米36的DRAM上海药物研究所使用4Mx16
|
Samsung Semiconductor Co., Ltd.
|
